Manufacturer | Part # | Datasheet | Description |
NEC |
NE5511279A
|
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs |
NE5511279A
|
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NE5511279A
|
297Kb/4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
Renesas Technology Corp |
NE5511279A
|
272Kb/10P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5511279A-A
|
297Kb/4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE5511279A-T1
|
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
Renesas Technology Corp |
NE5511279A-T1
|
272Kb/10P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5511279A-T1-A
|
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE5511279A-T1A
|
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
Renesas Technology Corp |
NE5511279A-T1A
|
272Kb/10P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5511279A-T1A-A
|
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NXP Semiconductors |
NE5512
|
33Kb/4P |
Dual high-performance operational amplifier
August 31, 1994 |
NE5512D
|
33Kb/4P |
Dual high-performance operational amplifier
August 31, 1994 |
NE5512N
|
33Kb/4P |
Dual high-performance operational amplifier
August 31, 1994 |
NE5514
|
54Kb/3P |
Quad high-performance operational amplifier
August 31, 1994 |
NE5514D
|
54Kb/3P |
Quad high-performance operational amplifier
August 31, 1994 |
NE5514N
|
54Kb/3P |
Quad high-performance operational amplifier
August 31, 1994 |
NE5517
|
298Kb/13P |
Dual operational transconductance amplifier
2002 Dec 06 |
NE5517
|
193Kb/18P |
Dual operational transconductance amplifier
2002 Dec 06 |
ON Semiconductor |
NE5517
|
187Kb/14P |
Dual Operational Transconductance Amplifier
April, 2006 ??Rev. 3 |