| Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
NE5500234-T1
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
California Eastern Labs |
NE5500234-T1-AZ
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
Renesas Technology Corp |
NE5500234-T1-AZ
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500434
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500434-A
|
137Kb/2P |
RF & Microwave device
|
|
NE5500434-AZ
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500434-T1
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500434-T1-AZ
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500479A
|
285Kb/11P |
SILICON POWER MOS FET
2003 |
|
NE5500479A-T1
|
285Kb/11P |
SILICON POWER MOS FET
2003 |
NEC |
NE5510179A
|
39Kb/4P |
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510179A
|
42Kb/4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC |
NE5510179A-T1
|
39Kb/4P |
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510179A-T1
|
42Kb/4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC |
NE5510279A
|
39Kb/5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510279A
|
42Kb/5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5510279A
|
288Kb/12P |
SILICON POWER MOS FET
2003 |
NEC |
NE5510279A-T1
|
39Kb/5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510279A-T1
|
42Kb/5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5510279A-T1
|
288Kb/12P |
SILICON POWER MOS FET
2003 |
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