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2N2222A Datasheet, PDF - Central Semiconductor Corp

Search Partnumber : End with "2N2222A" - Select : 1 , Total : 11 ( 1/1 Page)
ManufacturerPart #DatasheetDescription
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Central Semiconductor C...
CP191V-2N2222A CENTRAL-CP191V-2N2222A Datasheet
579Kb/3P
   NPN - Small Signal Transistor Die

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Brief Description of 2N2222A


The 2N2222A is a widely used NPN bipolar junction transistor (BJT) that is commonly used for amplification and switching in electronic circuits. It is part of the 2N22xx series of transistors, which are known for their general-purpose applications. Here are some key features and specifications of the 2N2222A transistor:

Polarity: NPN (Negative-Positive-Negative).

The 2N2222A is constructed with an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically around 800 mA.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state.
Maximum Collector-Base Voltage (Vcbo): Typically around 75V.

This is the maximum voltage that can be applied between the collector and base terminals while keeping the emitter terminal open.
Maximum Collector-Emitter Voltage (Vceo): Typically around 30V.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 100 to 300.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
Package: The 2N2222A is commonly available in TO-18 or TO-92 packages, which are small and widely used in various electronic circuits.

Applications: The 2N2222A transistor is used in a wide range of electronic circuits, including amplifiers, switching applications, signal processing, oscillators, and more.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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