The MJE13003 is a specific part number for a high-voltage NPN bipolar junction transistor (BJT). These transistors are commonly used in electronic circuits for high-power amplification and switching applications. The MJE prefix typically indicates a series of transistors, and the 13003 part of the designation provides specific details about this particular transistor's characteristics.
Here are some key characteristics and specifications of the MJE13003 transistor:
Type: MJE13003 is an NPN bipolar transistor.
Package: It typically comes in a through-hole package, such as the TO-126 or TO-220 package, which are commonly used for medium- to high-power transistors.
Polarity: As an NPN transistor, the current flows from the collector to the base and then to the emitter when it is in the active state.
Voltage and Current Ratings: The specific voltage and current ratings can vary depending on the specific manufacturer and part specifications. Typical voltage ratings for the MJE13003 might include a collector-emitter voltage (Vce) of around 400 to 600 volts, and a collector current (Ic) rating of several amperes (A).
Gain (hFE): The current gain or hFE (beta) of the MJE13003 transistor typically falls in the range of 25 to 100, depending on the specific part and manufacturer.
Applications: MJE13003 transistors are widely used in high-power applications where NPN transistor amplification or switching is required. Common applications include power amplification, motor control, voltage regulation, and as a building block in high-power electronics circuits.
Pinout: The pinout of the MJE13003 transistor includes three leads: collector, base, and emitter. The orientation of these pins is standardized in the TO-126 or TO-220 package.
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
