| Manufacturer | Part # | Datasheet | Description |
 Kemet Corporation |
CDR33BX104AKSS
|
1Mb/10P |
CERAMIC CHIP/MIL-PRF-55681
|
 Freescale Semiconductor... |
CDR33BX104AKWS
|
868Kb/13P |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
|
CDR33BX104AKWS
|
1Mb/27P |
RF Power LDMOS Transistors
|
 NXP Semiconductors |
CDR33BX104AKWS
|
424Kb/12P |
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Rev. 0, 02/2021 |
|
CDR33BX104AKWS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 Freescale Semiconductor... |
CDR33BX104AKYS
|
748Kb/11P |
RF Power Field Effect Transistor
|
|
CDR33BX104AKYS
|
1Mb/18P |
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
|
CDR33BX104AKYS
|
1Mb/19P |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
|
CDR33BX104AKYS
|
1Mb/19P |
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
|
|
CDR33BX104AKYS
|
1Mb/19P |
RF Power Field Effect Transistors
|
 NXP Semiconductors |
CDR33BX104AKYS
|
1Mb/19P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
Rev. 0, 7/2014 |
|
CDR33BX104AKYS
|
1Mb/18P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
Rev. 0, 7/2014 |
 Kemet Corporation |
CDR33BX104AKZS
|
70Kb/1P |
Ceramic, Military/High Reliability, MilChip-55681, 0.1 uF, 10%, 50 V, 1210, BX, S (0.001%/1000 Hrs)
|