Manufacturer | Part # | Datasheet | Description |
Intersil Corporation |
HGTD6N40E1
|
32Kb/4P |
6A, 400V and 500V N-Channel IGBTs
March 1997 |
HGTD6N40E1S
|
32Kb/4P |
6A, 400V and 500V N-Channel IGBTs
March 1997 |
HGTD6N50E1
|
32Kb/4P |
6A, 400V and 500V N-Channel IGBTs
March 1997 |
HGTD6N50E1S
|
32Kb/4P |
6A, 400V and 500V N-Channel IGBTs
March 1997 |
KOA Speer Electronics, ... |
MHL1JCTTD6N8
|
120Kb/3P |
multilayer ceramic inductor
|
MHL1JCTTD6N8
|
150Kb/6P |
Multilayer Ceramic Inductors
|
Motorola, Inc |
MTD6N10
|
167Kb/5P |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
|
Inchange Semiconductor ... |
MTD6N10
|
345Kb/2P |
isc N-Channel MOSFET Transistor
|
Motorola, Inc |
MTD6N10E
|
211Kb/10P |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
|
ON Semiconductor |
MTD6N10E
|
265Kb/10P |
Power Field Effect Transistor
August, 2006 ??Rev. 3 |
Motorola, Inc |
MTD6N15
|
231Kb/10P |
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
|
ON Semiconductor |
MTD6N15
|
88Kb/8P |
Power Field Effect Transistor DPAK for Surface Mount
March, 2004 ??Rev. 2 |
Inchange Semiconductor ... |
MTD6N15
|
345Kb/2P |
isc N-Channel MOSFET Transistor
|
ON Semiconductor |
MTD6N15-1
|
88Kb/8P |
Power Field Effect Transistor DPAK for Surface Mount
March, 2004 ??Rev. 2 |
Inchange Semiconductor ... |
MTD6N15I
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
ON Semiconductor |
MTD6N15T4
|
88Kb/8P |
Power Field Effect Transistor DPAK for Surface Mount
March, 2004 ??Rev. 2 |
MTD6N15T4G
|
125Kb/6P |
N?묬hannel Enhancement?묺ode Silicon Gate
May, 2013 ??Rev. 5 |
VBsemi Electronics Co.,... |
MTD6N15T4G
|
1,009Kb/7P |
N-Channel 200 V (D-S) MOSFET
|
Motorola, Inc |
MTD6N20E
|
269Kb/10P |
TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM
|
ON Semiconductor |
MTD6N20E
|
90Kb/9P |
Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK
August, 2005 ??Rev. 3 |