| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
GT10G101
|
835Kb/16P |
Discrete IGBTs
|
|
GT10G102
|
835Kb/16P |
Discrete IGBTs
|
|
GT10G131
|
201Kb/7P |
Silicon N Channel IGBT Strobe Flash Applications
|
|
GT10G131
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 Hirose Electric |
GT10-16DP-DS
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-16DP-HU
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-16DP-R
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-16DS-HU
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-2022PCF
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-2022SCF
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-2428SCF
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
 Goford Semiconductor |
GT1003A
|
919Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
GT1003AA
|
734Kb/6P |
Consumer electronic powersupply
|
|
GT1003D
|
724Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
 Vishay Siliconix |
GT100DA120U
|
177Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
Revision: 22-Jul-10 |
|
GT100DA120U
|
176Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
02-Oct-12 |
|
GT100DA60U
|
175Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
Revision: 22-Jul-10 |
|
GT100DA60U
|
178Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
02-Oct-12 |
|
GT100DA60U
|
178Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
02-Oct-12 |
|
GT100LA120UX
|
177Kb/10P |
"Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A
Revision: 22-Jul-10 |