Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
GT60J101
|
835Kb/16P
|
Discrete IGBTs
|
GT60J321
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT60J321
|
183Kb/6P
|
The 4th Generation Soft Switching Applications
|
GT60J322
|
835Kb/16P
|
Discrete IGBTs
|
GT60J322
|
277Kb/6P
|
The 4th Generation Soft Switching Applications
|
GT60J323
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT60J323
|
182Kb/6P
|
Current Resonance Inverter Switching Application
|
GT60J323
|
175Kb/6P
|
Gate Bipolar Transistor Silicon N Channel IGBT
|
GT60J323H
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT60J323H
|
182Kb/6P
|
Current Resonance Inverter Switching Application
|
GT60M101
|
835Kb/16P
|
Discrete IGBTs
|
GT60M102
|
835Kb/16P
|
Discrete IGBTs
|
GT60M103
|
835Kb/16P
|
Discrete IGBTs
|
GT60M104
|
253Kb/4P
|
N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)
|
GT60M104
|
835Kb/16P
|
Discrete IGBTs
|
GT60M105
|
835Kb/16P
|
Discrete IGBTs
|
GT60M301
|
835Kb/16P
|
Discrete IGBTs
|
GT60M301
|
292Kb/5P
|
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
|
GT60M302
|
275Kb/5P
|
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
GT60M302
|
835Kb/16P
|
Discrete IGBTs
|