The 2N60 is an N-Channel MOSFET that is optimized for high voltage power applications, offering features such as fast switching, low gate charge, and low on-state resistance. It is also designed to withstand rugged avalanche conditions. These features make it commonly used in power supplies, PWM motor controls, DC to DC converters, and bridge circuits.
Here is a summary of the 2N60's characteristics:
Drain to Source Voltage (V_DSS): It can tolerate up to 600V, which is the maximum voltage between the drain and source when the MOSFET is turned off.
Gate to Source Voltage (V_GSS): It supports a gate to source voltage of ±30V.
Drain Current (I_D): The 2N60 can sustain a drain current of 2A, indicating the maximum current that can flow through the drain terminal continuously.
Power Dissipation (P_D): It has a power dissipation rating of 23W, dictating how much power it can handle before exceeding the maximum junction temperature.
Junction Temperature (T_J): The operating junction temperature can reach up to 150°C.
Storage Temperature (T_stg): The component can be stored at temperatures ranging from -55 to +150°C.
For specific implementations, the device offers a low on-resistance of 3.8Ω at a V_GS of 10V. The low gate charge (typical at 9.0nC) and low reverse transfer capacitance (Crss = typical 5.0 pF) facilitate fast switching and improved efficiency. These specifications are geared towards ensuring that the MOSFET can provide the required performance in power management tasks with efficiency and reliability.
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
