2N5551 is a general-purpose NPN bipolar junction transistor (BJT) commonly used in amplifier and switching applications. It has a maximum current gain (hFE) of 400, a collector current (IC) rating of 600mA, and a maximum collector-emitter voltage (VCEO) of 160V.
Some of the technical specifications of 2N5551 are:
Maximum collector current (IC): 600mA
Maximum collector-emitter voltage (VCEO): 160V
Maximum emitter-base voltage (VEBO): 6V
Maximum DC current gain (hFE): 400
Maximum power dissipation (Ptot): 625mW
Operating temperature range: -55°C to +150°C
Package: TO-92, SOT-223
2N5551 is commonly used in low-power amplifier circuits, switching circuits, and voltage regulator circuits. Its low cost, high current gain, and high voltage rating make it a popular choice for many electronic designs.
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