Manufacturer | Part # | Datasheet | Description |
 Faraday Technology |
VS400M
|
39Kb/2P
|
SERIAL DIGITAL VIDEO PASSIVE SIGNAL SPLITTER
|
 SHENZHEN DOINGTER SEMIC... |
VS40120AD
|
1Mb/6P
|
N-Channel MOSFET uses advanced SGT technology
|
 Vectron International, ... |
VS402
|
569Kb/6P
|
Dual Frequency VCSO
|
 SHENZHEN DOINGTER SEMIC... |
VS40200AD
|
2Mb/6P
|
N-Channel MOSFET uses advanced SGT technology
|
VS40280AT
|
2Mb/6P
|
N-Channel MOSFET uses advanced trench technology
|
VS4080AD
|
2Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
VS40N10AT
|
942Kb/3P
|
N-Channel MOSFET uses advanced trench technology
|
 Rohm |
VS40VUA1VWM
|
1Mb/10P
|
Transient Voltage Suppressor
2022/02/08_Rev.001
|
VS40VUA1VWMTF
|
2Mb/10P
|
Transient Voltage Suppressor
2022/02/08_Rev.001
|
Search Partnumber :
Start with "VS40" -
Total : 27 ( 1/2 Page) |
 Faraday Technology |
VS400M
|
39Kb/2P |
SERIAL DIGITAL VIDEO PASSIVE SIGNAL SPLITTER
|
 SHENZHEN DOINGTER SEMIC... |
VS40120AD
|
1Mb/6P |
N-Channel MOSFET uses advanced SGT technology
|
 Vectron International, ... |
VS402
|
569Kb/6P |
Dual Frequency VCSO
|
 SHENZHEN DOINGTER SEMIC... |
VS40200AD
|
2Mb/6P |
N-Channel MOSFET uses advanced SGT technology
|
VS40280AT
|
2Mb/6P |
N-Channel MOSFET uses advanced trench technology
|
VS4080AD
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
VS40N10AT
|
942Kb/3P |
N-Channel MOSFET uses advanced trench technology
|
 Rohm |
VS40VUA1VWM
|
1Mb/10P |
Transient Voltage Suppressor
2022/02/08_Rev.001 |
VS40VUA1VWMTF
|
2Mb/10P |
Transient Voltage Suppressor
2022/02/08_Rev.001 |
 Emerson Network Power |
VS4/9
|
346Kb/8P |
VS Series
|
 SHENZHEN DOINGTER SEMIC... |
VS4310AT
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|