Electronic Manufacturer | Part no | Datasheet | Electronics Description |
 Motorola, Inc |
MTD6N10
|
 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
MTD6N15
|
 |
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
 ON Semiconductor |
MTD6N15
|
 |
Power Field Effect Transistor DPAK for Surface Mount |
 Guangdong Kexin Industr... |
NTD6N15
|
 |
N-Channel MOSFET |
 ON Semiconductor |
NTD6N40
|
 |
N−Channel DPAK Power MOSFET |
 STMicroelectronics |
STD6N10
|
 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
 Motorola, Inc |
MTD6N10E
|
 |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
 ON Semiconductor |
MTD6N10E
|
 |
Power Field Effect Transistor |
MTD6N20E
|
 |
Power MOSFET 6 Amps, 200 Volts N−Channel DPAK |
 Motorola, Inc |
MTD6N20E
|
 |
TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM |
 STMicroelectronics |
STD6NC40
|
 |
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh™II MOSFET |
STD6NF10
|
 |
N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET |
STD6NF10
|
 |
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET |
 ON Semiconductor |
MTD6N15-1
|
 |
Power Field Effect Transistor DPAK for Surface Mount |
MTD6N15T4
|
 |
Power Field Effect Transistor DPAK for Surface Mount |
MTD6N20E1
|
 |
Power MOSFET 6 Amps, 200 Volts N−Channel DPAK |
 STMicroelectronics |
STD6N52K3
|
 |
Extremely high dv/dt capability |
STD6N52K3
|
 |
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET |
STD6N60M2
|
 |
Extremely low gate charge |
STD6N62K3
|
 |
N-channel 620 V, 1.1 Ω, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3™ Power MOSFET |