Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
NE5814M14-T3-A
|
291Kb/10P
|
MOS FIELD EFFECT TRANSISTOR
2006
|
California Eastern Labs |
NE662M16-T3-A
|
175Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NE681M13-T3-A
|
148Kb/3P
|
NECs NP SILICON TRANSISTOR
|
NE685M13-T3-A
|
157Kb/9P
|
NPN SILICON TRANSISTOR
|
NE685M33-T3-A
|
359Kb/6P
|
NECs NPN SILICON TRANSISTOR
|
NE687M13-T3-A
|
195Kb/8P
|
NECs NPN SILICON TRANSISTOR
|
NE687M33-T3-A
|
344Kb/6P
|
NECs NPN SILICON TRANSISTOR
|
NE851M13-T3-A
|
277Kb/10P
|
NPN SILICON TRANSISTOR
|
NE851M33-T3-A
|
346Kb/6P
|
NECs NPN SILICON TRANSISTOR
|
Renesas Technology Corp |
NE851M33-T3-A
|
242Kb/11P
|
NPN SILICON RF TRANSISTOR
2008
|
California Eastern Labs |
NE894M13-T3-A
|
473Kb/9P
|
NPN SILICON TRANSISTOR
|
Renesas Technology Corp |
NESG2021M16-T3-A
|
337Kb/14P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|
California Micro Device... |
NESG2021M16-T3-A
|
224Kb/3P
|
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
NEC |
NESG2021M16-T3-A
|
120Kb/12P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs |
NESG2021M16-T3-A
|
861Kb/11P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
Renesas Technology Corp |
NESG2031M16-T3-A
|
336Kb/14P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|
California Eastern Labs |
NESG2031M16-T3-A
|
230Kb/3P
|
HIGH FREQUENCY TRANSISTOR
|
NEC |
NESG2031M16-T3-A
|
119Kb/12P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
Renesas Technology Corp |
NESG2046M33-T3-A
|
240Kb/10P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2008
|
NEC |
NESG2046M33-T3-A
|
118Kb/3P
|
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|