| Manufacturer | Part # | Datasheet | Description |
STMicroelectronics |
STN0214
|
133Kb/7P
|
Very high voltage NPN power transistor
|
celduc-relais |
STN07105
|
86Kb/2P
|
AC/DC Solid State Relay
|
Stanson Technology |
STN1012
|
285Kb/6P
|
Dual N Channel Enhancement Mode MOSFET
|
List of Unclassifed Man... |
STN1110
|
612Kb/24P
|
Multiprotocol OBD to UART Interpreter
|
|
STN1110-I/MM
|
612Kb/24P
|
Multiprotocol OBD to UART Interpreter
|
|
STN1110-I/SO
|
612Kb/24P
|
Multiprotocol OBD to UART Interpreter
|
|
STN1110-I/SP
|
612Kb/24P
|
Multiprotocol OBD to UART Interpreter
|
Stanson Technology |
STN1304
|
240Kb/6P
|
N Channel Enhancement Mode MOSFET
|
STMicroelectronics |
STN1802
|
51Kb/4P
|
HIGH CURRENT GAIN CHARACTERISTIC
March 2003
|
VBsemi Electronics Co.,... |
STN1810
|
469Kb/9P
|
N-Channel 100 V (D-S) MOSFET
|
Stanson Technology |
STN1810
|
966Kb/7P
|
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
SHENZHEN DOINGTER SEMIC... |
STN1810
|
1Mb/6P
|
N-Channel MOSFET uses advanced trench technology
|
Stanson Technology |
STN18T20
|
285Kb/4P
|
N Channel Enhancement Mode MOSFET
|
SemiWell Semiconductor |
STN1A60
|
535Kb/6P
|
Bi-Directional Triode Thyristor
|
Tiger Electronic Co.,Lt... |
STN1A60
|
128Kb/1P
|
Silicon Bidirectional Triode Thyristors
|
Shenzhen Winsemi Microe... |
STN1A60
|
353Kb/5P
|
Logic Level Bi-Directional Triode Thyristor
|
|
STN1A60S
|
368Kb/5P
|
Logic Level Bi-Directional Triode Thyristor
|
SemiWell Semiconductor |
STN1A80
|
535Kb/6P
|
Bi-Directional Triode Thyristor
|
Tiger Electronic Co.,Lt... |
STN1A80
|
128Kb/1P
|
Silicon Bidirectional Triode Thyristors
|
Shenzhen Winsemi Microe... |
STN1A80
|
406Kb/5P
|
Logic Level Bi-Directional Triode Thyristor
|
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