Manufacturer | Part # | Datasheet | Description |
 Samsung semiconductor |
RU2012
|
4Mb/20P
|
Passive components sales offices
|
 Ruichips Semiconductor ... |
RU20120L
|
310Kb/8P
|
N-Channel Advanced Power MOSFET
|
RU20130L
|
302Kb/9P
|
N-Channel Advanced Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
RU20130L
|
928Kb/4P
|
N-Channel MOSFET uses advanced trench technology
|
 Ruichips Semiconductor ... |
RU2013H
|
274Kb/9P
|
N-Channel Advanced Power MOSFET
|
 VBsemi Electronics Co.,... |
RU2013HCGTR
|
1,006Kb/9P
|
N-Channel 20V (D-S) MOSFET
|
 Ruichips Semiconductor ... |
RU2020H
|
273Kb/9P
|
N-Channel Advanced Power MOSFET
|
RU2021H
|
275Kb/9P
|
N-Channel Advanced Power MOSFET
|
RU205B
|
269Kb/9P
|
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
 VBsemi Electronics Co.,... |
RU205B
|
1Mb/9P
|
N-Channel 20 V (D-S) MOSFET
|
 Ruichips Semiconductor ... |
RU206G
|
247Kb/9P
|
N-Channel Advanced Power MOSFET
|
RU2090M
|
305Kb/9P
|
N-Channel Advanced Power MOSFET
|
 Sanken electric |
RU20A
|
22Kb/1P
|
Fast-Recovery Rectifier Diodes
|
RU20A
|
78Kb/2P
|
Fast-Recovery Rectifier Diodes
|
 Galaxy Semi-Conductor H... |
RU20A
|
55Kb/2P
|
HIGH EFFICIENCY RECTIFIER
|
 Diode Semiconductor Kor... |
RU20A
|
237Kb/2P
|
HIGH EFFICIENCY RECTIFIER
|
 EIC discrete Semiconduc... |
RU20A
|
177Kb/2P
|
FAST RECOVERY RECTIFIER DIODE
Rev. 03:February 28, 2014
|
 Diode Semiconductor Kor... |
RU20AZ
|
237Kb/2P
|
HIGH EFFICIENCY RECTIFIER
|
 Ruichips Semiconductor ... |
RU20C10H
|
346Kb/10P
|
Complementary Advanced Power MOSFET
|
RU20D10H
|
256Kb/9P
|
N-Channel Advanced Power MOSFET
|