Manufacturer | Part # | Datasheet | Description |
Turck, Inc. |
RU200-CK40-2UN8X2T-H1151
|
967Kb/4P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CK40-2UP8X2T-H1151
|
967Kb/4P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-2UN8X2T
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-2UN8X2T/S10
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-2UP8X2T
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-2UP8X2T/S10
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-LIU2N8X2T
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-LIU2N8X2T/S10
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-LIU2P8X2T
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
RU200-CP40-LIU2P8X2T/S10
|
1Mb/3P
|
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023
|
Samsung semiconductor |
RU2012
|
4Mb/20P
|
Passive components sales offices
|
Ruichips Semiconductor ... |
RU20120L
|
310Kb/8P
|
N-Channel Advanced Power MOSFET
|
RU20130L
|
302Kb/9P
|
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU20130L
|
928Kb/4P
|
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU2013H
|
274Kb/9P
|
N-Channel Advanced Power MOSFET
|
VBsemi Electronics Co.,... |
RU2013HCGTR
|
1,006Kb/9P
|
N-Channel 20V (D-S) MOSFET
|
Ruichips Semiconductor ... |
RU2020H
|
273Kb/9P
|
N-Channel Advanced Power MOSFET
|
RU2021H
|
275Kb/9P
|
N-Channel Advanced Power MOSFET
|
RU205B
|
269Kb/9P
|
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
VBsemi Electronics Co.,... |
RU205B
|
1Mb/9P
|
N-Channel 20 V (D-S) MOSFET
|