Manufacturer | Part # | Datasheet | Description |
 California Eastern Labs |
NE55410GR-T3-AZ
|
558Kb/13P
|
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
 NEC |
NE55410GR-T3-AZ
|
186Kb/13P
|
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Search Partnumber :
Start with "NE55410GR-T3-AZ" -
Total : 103 ( 1/6 Page) |
 California Eastern Labs |
NE55410GR
|
580Kb/14P |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
 Renesas Technology Corp |
NE5500134
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
NE5500134-A
|
137Kb/2P |
RF & Microwave device
|
NE5500134-AZ
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
NE5500134-T1
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
NE5500134-T1-AZ
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
 NEC |
NE5500179A
|
66Kb/11P |
SILICON POWER MOS FET
|
 California Eastern Labs |
NE5500179A
|
43Kb/5P |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
 Renesas Technology Corp |
NE5500179A
|
298Kb/13P |
SILICON POWER MOS FET
2003 |
 NEC |
NE5500179A-T1
|
66Kb/11P |
SILICON POWER MOS FET
|
 California Eastern Labs |
NE5500179A-T1
|
43Kb/5P |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
 Renesas Technology Corp |
NE5500179A-T1
|
298Kb/13P |
SILICON POWER MOS FET
2003 |
 California Eastern Labs |
NE5500234
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
 Renesas Technology Corp |
NE5500234
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
NE5500234-A
|
137Kb/2P |
RF & Microwave device
|
 California Eastern Labs |
NE5500234-AZ
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
 Renesas Technology Corp |
NE5500234-AZ
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
 California Eastern Labs |
NE5500234-T1
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|