| Manufacturer | Part # | Datasheet | Description |
NEC |
NE552R679A-T1A
|
68Kb/9P
|
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R679A-T1A
|
290Kb/11P
|
SILICON POWER MOS FET
2003
|
| Search Partnumber :
Start with "NE552R679A-T1A" -
Total : 11 ( 1/1 Page) |
Renesas Technology Corp |
NE552R679A-T1
|
290Kb/11P |
SILICON POWER MOS FET
2003 |
NEC |
NE552R679A-T1
|
68Kb/9P |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE552R479A
|
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE552R479A
|
291Kb/11P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE552R479A
|
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
|
NE552R479A-T1
|
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A-T1
|
291Kb/11P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE552R479A-T1-A
|
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
|
NE552R479A-T1A
|
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A-T1A
|
291Kb/11P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE552R479A-T1A-A
|
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand