Manufacturer | Part # | Datasheet | Description |
 California Eastern Labs |
NE3512S02-T1C
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
 Renesas Technology Corp |
NE3512S02-T1C
|
200Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
 California Eastern Labs |
NE3512S02-T1C-A
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
NE3512S02-T1D
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
 Renesas Technology Corp |
NE3512S02-T1D
|
200Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
 California Eastern Labs |
NE3512S02-T1D-A
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
Search Partnumber :
Start with "NE3512S02-" -
Total : 6 ( 1/1 Page) |
 California Eastern Labs |
NE3512S02-T1C
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
 Renesas Technology Corp |
NE3512S02-T1C
|
200Kb/11P |
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
 California Eastern Labs |
NE3512S02-T1C-A
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
NE3512S02-T1D
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
 Renesas Technology Corp |
NE3512S02-T1D
|
200Kb/11P |
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
 California Eastern Labs |
NE3512S02-T1D-A
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|