Manufacturer | Part # | Datasheet | Description |
Samsung semiconductor |
CIM10N121
|
757Kb/5P
|
Chip Bead For EMI Suppression
|
DACO SEMICONDUCTOR CO.,... |
DAM10N100F
|
272Kb/4P
|
N-Channel Enhancement Mode MOSFET
|
DAM10N100H
|
254Kb/4P
|
N-Channel Enhancement Mode MOSFET
|
DAM10N100S
|
236Kb/4P
|
N-Channel Enhancement Mode MOSFET
|
Shenzhen Huazhimei Semi... |
HM10N10I
|
703Kb/7P
|
N-Channel Enhancement Mode Power MOSFET
|
VBsemi Electronics Co.,... |
HM10N10K
|
1Mb/7P
|
N-Channel 100 V (D-S) MOSFET
|
Shenzhen Huazhimei Semi... |
HM10N10K
|
571Kb/7P
|
N-Channel Enhancement Mode Power MOSFET
|
HM10N10KA
|
604Kb/7P
|
N-Channel Enhancement Mode Power MOSFET
|
HM10N10Q
|
860Kb/6P
|
N-Channel Enhancement Mode Power MOSFET
|
HM10N120T
|
1Mb/8P
|
1200V /10A Trench Field Stop IGBT
|
HM10N15D
|
957Kb/7P
|
N-Channel Enhancement Mode Power MOSFET
|
IXYS Corporation |
IXFM10N100
|
82Kb/4P
|
HiPerFET Power MOSFETs
|
IXFM10N100
|
295Kb/8P
|
HIPERFET Power MOSFTETs
|
Inchange Semiconductor ... |
IXFM10N100
|
316Kb/2P
|
isc N-Channel MOSFET Transistor
|
IXYS Corporation |
IXTM10N100
|
106Kb/4P
|
MegaMOS FET
|
STMicroelectronics |
M68AW127BM10N1T
|
327Kb/20P
|
1Mbit 128K x8, 3.0V Asynchronous SRAM
|
Inchange Semiconductor ... |
MTM10N100E
|
260Kb/2P
|
isc N-Channel MOSFET Transistor
2023-9-18
|
MTM10N12L
|
260Kb/2P
|
isc N-Channel MOSFET Transistor
2023-9-18
|
MTM10N15L
|
260Kb/2P
|
isc N-Channel MOSFET Transistor
2023-9-27
|
GE Solid State |
RFM10N12
|
211Kb/4P
|
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
|