| Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
IFS100B12N3E4_B31
|
702Kb/9P
|
MIPAQ?줮ase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand
V2.0 2013-03-06
|
| Search Partnumber :
Start with "IFS100B12N3E4" -
Total : 7 ( 1/1 Page) |
Infineon Technologies A... |
IFS100B12N3E4_B31
|
702Kb/9P |
MIPAQ?줮ase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand
V2.0 2013-03-06 |
|
IFS100B12N3T4_B31
|
419Kb/8P |
MA3AE12_EVAL – Isolating Amplifier for current measurement with MIPAQTM Base
V1.1, June 2014 |
|
IFS100V12PT4
|
383Kb/8P |
MIPAQserve
08.06.2010 revision: 2.0 |
|
IFS150B12N3E4_B31
|
520Kb/9P |
IGBT-modules
2010-06-16 revision:2.0 |
|
IFS150B12N3T4_B31
|
419Kb/8P |
MA3AE12_EVAL – Isolating Amplifier for current measurement with MIPAQTM Base
V1.1, June 2014 |
|
IFS150B17N3E4P_B11
|
659Kb/9P |
MIPAQ?줮ase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / bereits aufgetragenem Thermal Interface Material
V 3.0 2017-01-13 |
|
IFS150V12PT4
|
371Kb/8P |
MIPAQserve
08.06.2010 revision: 2.0 |
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