Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
GT50J301
|
282Kb/5P
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT50J301
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
Search Partnumber :
Start with "GT50J301" -
Total : 25 ( 1/2 Page) |
Toshiba Semiconductor |
GT50J322
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J322
|
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
GT50J322
|
254Kb/5P |
N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS)
|
GT50J322H
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J322
|
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
GT50J325
|
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications
|
GT50J325
|
170Kb/7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT50J325
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J325
|
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications
|
GT50J327
|
159Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
|
GT50J327
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J328
|
232Kb/6P |
Current Resonance Inverter Switching Application Fourth Generation IGBT
|
GT50J328
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J341
|
250Kb/9P |
Discrete IGBTs Silicon N-Channel IGBT
|
GT50J101
|
835Kb/16P |
Discrete IGBTs
|
GT50J102
|
254Kb/5P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT50J102
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J121
|
317Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|