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Manufacturer Part # Datasheet Description Toshiba Semiconductor GT10G101 835Kb/16P Discrete IGBTs GT10G102 835Kb/16P Discrete IGBTs GT10G131 201Kb/7P Silicon N Channel IGBT Strobe Flash Applications GT10G131 1Mb/73P Bipolar Small-Signal Transistors Search Partnumber : Start with "GT10G" - Total : 100 ( 1/5 Page) Toshiba Semiconductor GT10G101 835Kb/16P Discrete IGBTs GT10G102 835Kb/16P Discrete IGBTs GT10G131 201Kb/7P Silicon N Channel IGBT Strobe Flash Applications GT10G131 1Mb/73P Bipolar Small-Signal Transistors Hirose Electric GT10-16DP-DS 177Kb/8P Subminiature ECU Interface Connectors GT10-16DP-HU 177Kb/8P Subminiature ECU Interface Connectors GT10-16DP-R 177Kb/8P Subminiature ECU Interface Connectors GT10-16DS-HU 177Kb/8P Subminiature ECU Interface Connectors GT10-2022PCF 177Kb/8P Subminiature ECU Interface Connectors GT10-2022SCF 177Kb/8P Subminiature ECU Interface Connectors GT10-2428SCF 177Kb/8P Subminiature ECU Interface Connectors Goford Semiconductor GT1003A 919Kb/6P N-Channel Enhancement Mode Power MOSFET GT1003AA 734Kb/6P Consumer electronic powersupply GT1003D 724Kb/6P N-Channel Enhancement Mode Power MOSFET Vishay Siliconix GT100DA120U 177Kb/10P Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Revision: 22-Jul-10 GT100DA120U 176Kb/10P Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 02-Oct-12

GT10G Datasheet, PDF [Distributor]

Distributor Part # Manufacturer Datasheet Description Buy Now Element14 GT10 VIBTEC PNEUMATIC TURBINE VIBRATOR; Centrifugal Force:2400N; Temperature Max:120°C; Thread Size - Metric:-; ... GT10J303 TOSHIBA IGBT, 600V, TO-220NIS; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):2.7V; ...

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