Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
R5F1008EALA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EAXXXFA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EAXXXFB
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EAXXXSM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EAXXXSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EDXXXFA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EDXXXFB
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EDXXXSM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EDXXXSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EGLA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EGXXXFA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EGXXXFB
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EGXXXSM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1008EGXXXSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
Microdiode Electronics ... |
SF1008ED
|
1Mb/4P
|
SUPER FAST GLASS PASSIVATED RECTIFIERS
|
SF1008ET
|
1Mb/4P
|
SUPER FAST GLASS PASSIVATED RECTIFIERS
|