Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
R5F1006EASM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EASP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EAXXXFA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EAXXXFB
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EAXXXSM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EAXXXSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EDSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EDXXXFA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EDXXXFB
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EDXXXSM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EDXXXSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EGSM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EGSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EGXXXFA
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EGXXXFB
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EGXXXSM
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
R5F1006EGXXXSP
|
3Mb/207P
|
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
Rev.3.50
|
Microdiode Electronics ... |
SF1006ED
|
1Mb/4P
|
SUPER FAST GLASS PASSIVATED RECTIFIERS
|
SF1006ET
|
1Mb/4P
|
SUPER FAST GLASS PASSIVATED RECTIFIERS
|