Manufacturer | Part No. | Datasheet | Description |
 Mitsubishi Electric Sem... |
CM800E2C-66H
|
55Kb / 4P
|
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
CM800E2Z-66H
|
50Kb / 4P
|
HIGH POWER SWITCHING USE
|
Search Partnumber :
Start with "CM800E2" -
Total : 24 ( 1/2 Page) |
 Mitsubishi Electric Sem... |
CM800E2C-66H
|
55Kb / 4P |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
CM800E2Z-66H
|
50Kb / 4P |
HIGH POWER SWITCHING USE
|
CM800E6C-66H
|
69Kb / 7P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM800DU-12H
|
76Kb / 4P |
Dual IGBTMOD 800 Amperes/600 Volts
|
CM800DY-24S
|
490Kb / 6P |
Powerex Dual IGBTMOD Modules are designed for use in switching applications.
|
 Mitsubishi Electric Sem... |
CM800DY-24S
|
433Kb / 9P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
CM800DZ-34H
|
63Kb / 6P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM800DZ-34H
|
64Kb / 4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Mitsubishi Electric Sem... |
CM800DZB-34N
|
97Kb / 7P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
CM800HA-24H
|
50Kb / 4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM800HA-24H
|
3Mb / 4P |
Single IGBTMOD 800 Amperes/1200 Volts
|
CM800HA-28H
|
55Kb / 4P |
Single IGBTMOD 800 Amperes/1400 Volts
|
 Mitsubishi Electric Sem... |
CM800HA-34H
|
64Kb / 4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
CM800HA-34H
|
46Kb / 4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
 Mitsubishi Electric Sem... |
CM800HA-50H
|
47Kb / 4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
CM800HA-66H
|
48Kb / 3P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
CM800HA-66H
|
48Kb / 4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
CM800HB-50H
|
51Kb / 4P |
HIGH POWER SWITCHING USE INSULATED TYPE
|