Manufacturer | Part # | Datasheet | Description |
Siemens Semiconductor G... |
CFY77-08
|
27Kb/4P
|
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
CFY77-10
|
27Kb/4P
|
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Search Partnumber :
Start with "CFY77" -
Total : 37 ( 1/2 Page) |
Siemens Semiconductor G... |
CFY77-08
|
27Kb/4P |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
CFY77-10
|
27Kb/4P |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
CFY25
|
158Kb/6P |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
Infineon Technologies A... |
CFY25
|
2Mb/8P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET
|
Siemens Semiconductor G... |
CFY25-17
|
158Kb/6P |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
CFY25-20
|
158Kb/6P |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
Infineon Technologies A... |
CFY25-20
|
2Mb/8P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET
|
CFY25-20P
|
2Mb/8P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET
|
Siemens Semiconductor G... |
CFY25-23
|
158Kb/6P |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
Infineon Technologies A... |
CFY25-23
|
2Mb/8P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET
|
CFY25-23P
|
2Mb/8P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET
|
CFY25-P
|
2Mb/8P |
HiRel X-Band GaAs Low Noise / General Purpose MESFET
|
CFY27
|
572Kb/8P |
HiRel Ku-Band GaAs General Purpose MESFET
September 99 |
CFY27-38
|
572Kb/8P |
HiRel Ku-Band GaAs General Purpose MESFET
September 99 |
CFY27-P
|
572Kb/8P |
HiRel Ku-Band GaAs General Purpose MESFET
September 99 |
Siemens Semiconductor G... |
CFY30
|
46Kb/6P |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
|
CFY35
|
33Kb/4P |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
|
CFY35-20
|
33Kb/4P |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
|