Manufacturer | Part # | Datasheet | Description |
Kemet Corporation |
C0603C103J5RAC
|
39Kb/2P
|
CERAMIC CHIP/STANDARD
|
NXP Semiconductors |
C0603C103J5RAC
|
181Kb/9P
|
Gallium Arsenide CATV Integrated Amplifier Module
Rev. 8, 3/2007
|
C0603C103J5RAC
|
460Kb/21P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 9, 10/2014
|
C0603C103J5RAC
|
388Kb/14P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 9, 10/2014
|
C0603C103J5RAC
|
456Kb/20P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 9, 10/2014
|
C0603C103J5RAC
|
493Kb/15P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 12, 9/2014
|
C0603C103J5RAC
|
478Kb/24P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 6, 12/2017
|
C0603C103J5RAC
|
640Kb/17P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 9, 9/2014
|
C0603C103J5RAC
|
438Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
C0603C103J5RAC
|
389Kb/14P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 4, 9/2014
|
C0603C103J5RAC
|
403Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
C0603C103J5RAC
|
916Kb/21P
|
RF Power Field Effect Transistors
Rev. 0, 3/2009
|
C0603C103J5RAC
|
413Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
C0603C103J5RAC
|
353Kb/23P
|
InGaP HBT Linear Amplifier
Rev. 2 - 4 April 2024
|
C0603C103J5RAC
|
364Kb/15P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 5, 3/2008
|
C0603C103J5RAC
|
416Kb/14P
|
Heterojunction Bipolar Transistor (InGaP HBT)
Rev. 7, 9/2014
|
C0603C103J5RAC
|
423Kb/14P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 8, 9/2014
|
C0603C103J5RAC
|
403Kb/15P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 7, 2/2012
|
C0603C103J5RAC-TU
|
1Mb/22P
|
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 1, 10/2010
|
Kemet Corporation |
C0603C103J5RAC7411
|
60Kb/1P
|
SMD Comm X7R, Ceramic, 0.01 uF, 5%, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Class II, 0603
|