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Shortcut   BSS123(90) recommended result.
Match, Like  BSS123(29) BSS123A(1) BSS123I(1) BSS123K(3) BSS123L(2) BSS123N(1) BSS123Q(1) BSS123W(6)
Start with  BSS123*(45) BSS123-*(6) BSS123B*(2) BSS123K*(3) BSS123L*(9) BSS123N*(1) BSS123Q*(2) BSS123W*(7)
End  *BSS123(2) *EBSS123(1) *SBSS123(1)
Included  *BSS123L*(7)
Manufacturer


BSS123 Datasheet, PDF

Search Partnumber : Match&Start with "BSS123" - Total : 81 ( 1/5 Page)
ManufacturerPart #DatasheetDescription
NXP Semiconductors
NXP Semiconductors		 BSS123 PHILIPS-BSS123 Datasheet
56Kb/4P 		   N-channel enhancement mode vertical D-MOS transistor
August 2000 Rev 1.000
BSS123 PHILIPS-BSS123 Datasheet
29Kb/4P 		   N-channel TrenchMOS transistor
August 2000-Rev 1.000
ON Semiconductor
ON Semiconductor		 BSS123 ONSEMI-BSS123 Datasheet
202Kb/7P 		   N-Channel Logic Level Enhancement Mode Field Effect Transistor
November, 2021 ??Rev. 10
Zetex Semiconductors
Zetex Semiconductors		 BSS123 ZETEX-BSS123 Datasheet
45Kb/1P 		   N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Infineon Technologies AG
Infineon Technologies A...		 BSS123 INFINEON-BSS123 Datasheet
3Mb/8P 		   SIPMOS??Small-Signal-Transistor Feature
2010-05-12
FutureWafer Tech Co.,Ltd
FutureWafer Tech Co.,Lt...		 BSS123 FUTUREWAFER-BSS123 Datasheet
1Mb/9P 		   N-Channel Enhancement Mode MOSFET
22-May-2021 V2.0
Siemens Semiconductor Group
Siemens Semiconductor G...		 BSS123 SIEMENS-BSS123 Datasheet
133Kb/8P 		   SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Bruckewell Technology LTD
Bruckewell Technology L...		 BSS123 BWTECH-BSS123 Datasheet
351Kb/5P 		   N-CHANNEL ENHANCEMENT MODE MOSFET
Pan Jit International Inc.
Pan Jit International I...		 BSS123 PANJIT-BSS123 Datasheet
320Kb/6P 		   100V N-Channel Enhancement Mode MOSFET – ESD Protected
July 25,2019-REV.01
Fairchild Semiconductor
Fairchild Semiconductor		 BSS123 FAIRCHILD-BSS123 Datasheet
284Kb/10P 		   N-Channel Logic Level Enhancement Mode Field Effect Transistor
Jiangsu Changjiang Electronics Technology Co., Ltd
Jiangsu Changjiang Elec...		 BSS123 JIANGSU-BSS123 Datasheet
1,007Kb/5P 		   N Channel MOSFET
Nanjing International Group Co
Nanjing International G...		 BSS123 DGNJDZ-BSS123 Datasheet
1Mb/5P 		   SOT-23 Plastic-Encapsulate MOSFETS
Diodes Incorporated
Diodes Incorporated		 BSS123 DIODES-BSS123 Datasheet
67Kb/3P 		   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30366 Rev. 3 - 2
Foshan Blue Rocket Electronics Co.,Ltd.
Foshan Blue Rocket Elec...		 BSS123 FOSHAN-BSS123 Datasheet
711Kb/6P 		   N-CHANNEL MOSFET in a SOT-23 Plastic Package
Nexperia B.V. All rights reserved
Nexperia B.V. All right...		 BSS123 NEXPERIA-BSS123 Datasheet
143Kb/5P 		   N-channel TrenchMOS transistor Logic level FET
August 2000
Infineon Technologies AG
Infineon Technologies A...		 BSS123 INFINEON-BSS123 Datasheet
77Kb/8P 		   SIPMOS Small-Signal-Transistor
2002-12-10
Micro Commercial Components
Micro Commercial Compon...		 BSS123 MCC-BSS123 Datasheet
627Kb/4P 		   N-Channel Enhancement Mode Field Effect Transistor
TECH PUBLIC Electronics co LTD
TECH PUBLIC Electronics...		 BSS123 TECHPUBLIC-BSS123 Datasheet
1Mb/4P 		   N-Channel Enhancement Mode MOSFET
Fairchild Semiconductor
Fairchild Semiconductor		 BSS123 FAIRCHILD-BSS123 Datasheet
145Kb/5P 		   N-Channel Logic Level Enhancement Mode Field Effect Transistor
Shenzhen Huazhimei Semiconductor Co., Ltd
Shenzhen Huazhimei Semi...		 BSS123 HMSEMI-BSS123 Datasheet
671Kb/6P 		   N-CHANNEL POWER MOSFET

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BSS123 Distributor
DistributorPart #ManufacturerDescriptionPriceQty.
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Brief Description of BSS123

The BSS123 is a part designation typically used for a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are commonly used as switches or amplifiers in various electronic applications.

Here are some general specifications for the BSS123 MOSFET:

Maximum Drain-Source Voltage (VDS): Typically around 100 volts
Maximum Drain Current (ID): Typically around 170 milliamperes
Maximum Gate-Source Voltage (VGS): Typically around ±20 volts
Threshold Voltage (VGS(th)): Typically around 0.7 to 3.0 volts
Drain-Source On-Resistance (RDS(on)): Typically around 6 ohms
Package Type: Typically SOT-23 (a small surface mount package)
The BSS123 MOSFET is commonly used in low-power switching applications, such as in portable electronics, small signal amplifiers, and general-purpose circuits.

Equivalent for BSS123

A suitable replacement for the BSS123 N-channel MOSFET transistor is the 2N7002.

The 2N7002 is also an N-channel MOSFET transistor with similar characteristics and widely available as a replacement for the BSS123. It can be used in low-power switching applications and amplification in electronic circuits.

Here are some key similarities between the BSS123 and 2N7002 transistors:

Drain-Source Voltage (VDS): The 2N7002 typically has a similar maximum drain-source voltage rating as the BSS123.

Continuous Drain Current (ID): The 2N7002 typically has a comparable maximum continuous drain current rating as the BSS123.

Total Power Dissipation (PD): The power dissipation capability of the 2N7002 is usually similar to that of the BSS123.

Gate-Source Threshold Voltage (VGS(th)): The gate-source threshold voltage of the 2N7002 is typically within a similar range as the BSS123.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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