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BD139 Datasheet, PDF

Search Partnumber : Match&Start with "BD139" - Total : 88 ( 1/5 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BD139	44Kb/8P	NPN power transistors 1999 Apr 12
STMicroelectronics	BD139	33Kb/4P	NPN SILICON TRANSISTORS
	BD139	76Kb/4P	NPN SILICON TRANSISTORS
	BD139	158Kb/9P	Complementary low voltage transistor
	BD139	148Kb/9P	Complementary low voltage transistor May 2008
	BD139	157Kb/9P	Complementary low voltage transistor
ON Semiconductor	BD139	42Kb/4P	Plastic Medium Power Silicon NPN Transistor April, 2005 ??Rev. 12
Motorola, Inc	BD139	100Kb/4P	Plastic Medium Power Silicon NPN Transistor
Shanghai Shunye Electro...	BD139	185Kb/2P	NPN Plastic Encapsulated Transistor V2.22
Micro Commercial Compon...	BD139	357Kb/3P	Power Transistors NPN Silicon 45,60,80 Volts
Inchange Semiconductor ...	BD139	131Kb/3P	Silicon NPN Power Transistors
Tiger Electronic Co.,Lt...	BD139	59Kb/1P	Complementary Silicon Power Ttransistors
New Jersey Semi-Conduct...	BD139	192Kb/3P	Silicon NPN Power Transistor
Siemens Semiconductor G...	BD139	185Kb/5P	NPN SILICON TRANSISTORS
Central Semiconductor C...	BD139	235Kb/2P	NPN SILICON TRANSISTOR
Fairchild Semiconductor	BD139	41Kb/4P	Medium Power Linear and Switching Applications
Comset Semiconductor	BD139	73Kb/3P	SILICON PLANAR EPITAXIAL POWER TRANSISTORS
First Silicon Co., Ltd	BD139	369Kb/4P	TRANSISTOR (NPN)
Unisonic Technologies	BD139	84Kb/2P	NPN POWER TRANSISTORS
Savantic, Inc.	BD139	111Kb/3P	Silicon NPN Power Transistors

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BD139 Datasheet, PDF [Distributor]

Distributor	Part #	Manufacturer Datasheet	Description	Buy Now
Element14	BD139	STMICROELECTRONICS	TRANSISTOR, NPN, 80V, 1.5A, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V;...
	BD139	MULTICOMP PRO	TRANSISTOR, NPN, 80V, 1.5A, TO-126;

BD139 Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of BD139

The BD139 is a widely used NPN bipolar junction transistor (BJT) known for its use in low to medium-power amplification and switching applications. It is part of the BD13x series of transistors, which are designed for general-purpose use. Here are some key features and specifications of the BD139 transistor:

Polarity: NPN (Negative-Positive-Negative).

The BD139 has an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically around 1.5A.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state.
Maximum Collector-Base Voltage (Vcbo): Typically around 80V.

This is the maximum voltage that can be applied between the collector and base terminals while keeping the emitter terminal open.
Maximum Collector-Emitter Voltage (Vceo): Typically around 80V.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 25 to 75.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
Package: The BD139 is commonly available in TO-126 or TO-126-3 packages, which are suitable for medium-power transistors.

Applications: The BD139 transistor is used in various low to medium-power amplification and switching applications, such as audio amplifiers, signal amplification, voltage amplifiers, and general-purpose electronic circuits.

Complementary Pair: The BD139 is often used in conjunction with its complementary PNP transistor, such as the BD140, to form a push-pull amplifier or switching pair for applications requiring bidirectional current flow.

Equivalent for BD139

The BD139 is a medium-power NPN transistor commonly used in audio amplification and switching applications, with a maximum collector current of 1.5A and a collector-emitter voltage of 80V. Several transistors can serve as replacements, offering similar electrical characteristics and functionalities:

BD169:

NPN transistor with comparable voltage and current ratings.
Suitable for general-purpose amplification and switching applications.
BD230:

NPN transistor with a maximum collector current of 2A and a collector-emitter voltage of 100V.
Provides higher current handling capability, making it suitable for slightly more demanding applications.
MJE244:

NPN power transistor with a maximum collector current of 3A and a collector-emitter voltage of 100V.
Offers higher current and voltage ratings, suitable for more demanding applications.
TIP31C:

NPN transistor with a maximum collector current of 3A and a collector-emitter voltage of 100V.
Commonly used in amplifier circuits and general-purpose switching applications.
BCP56 (SOT-223):

SMD version of the BD139 transistor.
Designed for surface mounting, offering similar parameters and functionalities.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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