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BD136 Datasheet, PDF

Search Partnumber : Start with "BD136" - Total : 39 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BD136-10	44Kb/8P	PNP power transistors 1999 Apr 12
Siemens Semiconductor G...	BD136-10	188Kb/5P	PNP SILICON TRANSISTORS
STMicroelectronics	BD136-10	76Kb/4P	PNP SILICON TRANSISTORS
SeCoS Halbleitertechnol...	BD136-10	85Kb/2P	PNP General Purpose Transistor
SeCoS Halbleitertechnol...	BD136-10	85Kb/2P	PNP General Purpose Transistor
Micro Commercial Compon...	BD136-10	317Kb/3P	Power Transistors PnP Silicon Volts
SeCoS Halbleitertechnol...	BD136-16	85Kb/2P	PNP General Purpose Transistor
SeCoS Halbleitertechnol...	BD136-16	85Kb/2P	PNP General Purpose Transistor
Micro Commercial Compon...	BD136-16	317Kb/3P	Power Transistors PnP Silicon Volts
STMicroelectronics	BD136-16	148Kb/9P	Complementary low voltage transistor May 2008
NXP Semiconductors	BD136-16	44Kb/8P	PNP power transistors 1999 Apr 12
Siemens Semiconductor G...	BD136-16	188Kb/5P	PNP SILICON TRANSISTORS
STMicroelectronics	BD136-16	76Kb/4P	PNP SILICON TRANSISTORS
	BD136-16	157Kb/9P	Complementary low voltage transistor
	BD136-16	158Kb/9P	Complementary low voltage transistor
Siemens Semiconductor G...	BD136-6	188Kb/5P	PNP SILICON TRANSISTORS
SeCoS Halbleitertechnol...	BD136-6	85Kb/2P	PNP General Purpose Transistor
SeCoS Halbleitertechnol...	BD136-6	85Kb/2P	PNP General Purpose Transistor
Micro Commercial Compon...	BD136-6	317Kb/3P	Power Transistors PnP Silicon Volts
Nanjing International G...	BD136-TU	1Mb/4P	TO-126 Plastic-Encapsulate Transistors

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BD136 Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of BD136

The BD136 is a part designation typically used for a NPN bipolar junction transistor (BJT). It is a general-purpose transistor commonly used in low-power amplification and switching applications.

Here are some general specifications for the BD136 transistor:

Maximum Collector-Base Voltage (VCBO): Typically around 45 volts
Maximum Collector-Emitter Voltage (VCEO): Typically around 45 volts
Maximum Emitter-Base Voltage (VEBO): Typically around 5 volts
Maximum Collector Current (IC): Typically around 1.5 amperes
Maximum Power Dissipation (Pd): Typically around 12.5 watts
Package Type: Typically TO-126 (a widely used through-hole package)
The BD136 transistor is commonly used in applications such as audio amplifiers, switching circuits, and general-purpose low-power applications.

Equivalent for BD136

A suitable replacement for the BD136 transistor is the TIP31. The TIP31 is a complementary NPN transistor that can serve as a substitute for the BD136 in many applications.

Here are some key similarities between the BD136 and TIP31 transistors:

Transistor Type: Both the BD136 and TIP31 transistors are NPN bipolar junction transistors (BJTs).

Voltage and Current Ratings: The voltage and current ratings of the BD136 and TIP31 are comparable. Both transistors have similar maximum collector current (IC) and maximum collector-emitter voltage (VCEO) ratings.

Package Type: The BD136 and TIP31 transistors are typically available in the same package type, such as TO-220 or TO-126. These packages are commonly used and provide good heat dissipation.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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