Manufacturer | Part No. | Datasheet | Description |
 Hitachi Semiconductor |
2SJ352
|
40Kb / 8P
|
Silicon P-Channel MOS FET
|
 Renesas Technology Corp |
2SJ352
|
70Kb / 6P
|
Silicon P Channel MOS FET
|
2SJ352-E
|
70Kb / 6P
|
Silicon P Channel MOS FET
|
Search Partnumber :
Start with "2SJ352" -
Total : 29 ( 1/2 Page) |
 Renesas Technology Corp |
2SJ352-E
|
70Kb / 6P |
Silicon P Channel MOS FET
|
 Hitachi Semiconductor |
2SJ350
|
47Kb / 9P |
Silicon P-Channel MOS FET
|
 Renesas Technology Corp |
2SJ350
|
82Kb / 7P |
Silicon P Channel MOS FET
|
 VBsemi Electronics Co.,... |
2SJ350
|
1Mb / 7P |
P-Channel 100 V (D-S) MOSFET
|
 Renesas Technology Corp |
2SJ350-E
|
82Kb / 7P |
Silicon P Channel MOS FET
|
 Guangdong Kexin Industr... |
2SJ3501
|
523Kb / 4P |
P-Channel MOSFET
|
 Renesas Technology Corp |
2SJ351
|
70Kb / 6P |
Silicon P Channel MOS FET
|
 Hitachi Semiconductor |
2SJ351
|
40Kb / 8P |
Silicon P-Channel MOS FET
|
 Renesas Technology Corp |
2SJ351-E
|
70Kb / 6P |
Silicon P Channel MOS FET
|
2SJ351
|
89Kb / 8P |
Silicon P Channel MOS FET
|
 NEC |
2SJ353
|
58Kb / 6P |
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
 Renesas Technology Corp |
2SJ353
|
204Kb / 8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
2SJ355
|
268Kb / 8P |
MOS FIELD EFFECT TRANSISTOR
1996 |
 VBsemi Electronics Co.,... |
2SJ355
|
985Kb / 8P |
P-Channel 30-V (D-S) MOSFET
|
 NEC |
2SJ355
|
67Kb / 6P |
P-CHANNEL MOS FET FOR HIGH SWITCHING
|
2SJ356
|
68Kb / 6P |
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
 Guangdong Kexin Industr... |
2SJ356
|
49Kb / 2P |
MOS Field Effect Transistors
|