Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

All Datasheet Distributor Manufacturer
Shortcut   2N2222A(159) recommended result.
Match, Like  2N2222A(38) 2N2222AB(1) 2N2222AD(1) 2N2222AE(1) 2N2222AL(5) 2N2222AS(1) 2N2222AU(3) 2N2222AV(1) 2N2222AW(1) 2N2222AX(1) P2N2222A(4)
Start with  2N2222A*(86) 2N2222A-*(1) 2N2222AB*(5) 2N2222AC*(8) 2N2222AD*(9) 2N2222AH*(1) 2N2222AQ*(2) 2N2222AS*(2) 2N2222AU*(27) 2N2222AV*(5) 2N2222AW*(5) 2N2222AX*(6)
End  *2N2222A(11) *-2N2222A(1) *N2N2222A(1) *S2N2222A(2) *T2N2222A(1) *V2N2222A(1) *X2N2222A(1)
Included  *2N2222A*(22) *2N2222AR*(1)
Manufacturer


2N2222A Datasheet, PDF

Search Partnumber : Included a word "2N2222A" - Total : 22 ( 1/2 Page)
ManufacturerPart #DatasheetDescription
logo
Central Semiconductor C...		 CP191-2N2222A-CT CENTRAL-CP191-2N2222A-CT Datasheet
465Kb/9P 		   P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-CT CENTRAL-CP191-2N2222A-CT Datasheet
530Kb/9P 		   PNP - High Voltage Transistor Die
R0 8-August 2019
CP191-2N2222A-WN CENTRAL-CP191-2N2222A-WN Datasheet
465Kb/9P 		   P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-WN CENTRAL-CP191-2N2222A-WN Datasheet
530Kb/9P 		   PNP - High Voltage Transistor Die
R0 8-August 2019
CP191-2N2222A-WR CENTRAL-CP191-2N2222A-WR Datasheet
465Kb/9P 		   P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-WR CENTRAL-CP191-2N2222A-WR Datasheet
530Kb/9P 		   PNP - High Voltage Transistor Die
R0 8-August 2019
CP191-2N2222A-WS CENTRAL-CP191-2N2222A-WS Datasheet
465Kb/9P 		   P-Channel JFET Die
R1 17-January 2018
CP191-2N2222A-WS CENTRAL-CP191-2N2222A-WS Datasheet
530Kb/9P 		   PNP - High Voltage Transistor Die
R0 8-August 2019
CP191V-2N2222A-CT CENTRAL-CP191V-2N2222A-CT Datasheet
465Kb/9P 		   P-Channel JFET Die
R1 17-January 2018
CP191V-2N2222A-CT CENTRAL-CP191V-2N2222A-CT Datasheet
530Kb/9P 		   PNP - High Voltage Transistor Die
R0 8-August 2019
CP191V-2N2222A-WN CENTRAL-CP191V-2N2222A-WN Datasheet
465Kb/9P 		   P-Channel JFET Die
R1 17-January 2018
CP191V-2N2222A-WN CENTRAL-CP191V-2N2222A-WN Datasheet
530Kb/9P 		   PNP - High Voltage Transistor Die
R0 8-August 2019
CP191V-2N2222A-WR CENTRAL-CP191V-2N2222A-WR Datasheet
530Kb/9P 		   PNP - High Voltage Transistor Die
R0 8-August 2019
CP191V-2N2222A-WR CENTRAL-CP191V-2N2222A-WR Datasheet
465Kb/9P 		   P-Channel JFET Die
R1 17-January 2018
logo
Microsemi Corporation		 JANS2N2222AUB MICROSEMI-JANS2N2222AUB Datasheet
142Kb/6P 		   ELECTRICAL CHARACTERISTICS (TA = +25째C, unless otherwise noted)
JANTX2N2222AUB MICROSEMI-JANTX2N2222AUB Datasheet
58Kb/2P 		   NPN SILICON SWITCHING TRANSISTOR
120101
JANTX2N2222AUB MICROSEMI-JANTX2N2222AUB Datasheet
142Kb/6P 		   TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR
MSR2N2222AUB MICROSEMI-MSR2N2222AUB Datasheet
781Kb/7P 		   Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900
Rev. 1
logo
ON Semiconductor		 P2N2222AG ONSEMI-P2N2222AG Datasheet
165Kb/6P 		   Amplifier Transistors(NPN Silicon)
April, 2007 -- Rev. 5
P2N2222ARL1G ONSEMI-P2N2222ARL1G Datasheet
165Kb/6P 		   Amplifier Transistors(NPN Silicon)
April, 2007 -- Rev. 5

12


12



2N2222A Distributor
DistributorPart #ManufacturerDescriptionPriceQty.
BuyNow



Brief Description of 2N2222A

The 2N2222A is a widely used NPN bipolar junction transistor (BJT) that is commonly used for amplification and switching in electronic circuits. It is part of the 2N22xx series of transistors, which are known for their general-purpose applications. Here are some key features and specifications of the 2N2222A transistor:

Polarity: NPN (Negative-Positive-Negative).

The 2N2222A is constructed with an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically around 800 mA.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state.
Maximum Collector-Base Voltage (Vcbo): Typically around 75V.

This is the maximum voltage that can be applied between the collector and base terminals while keeping the emitter terminal open.
Maximum Collector-Emitter Voltage (Vceo): Typically around 30V.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 100 to 300.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
Package: The 2N2222A is commonly available in TO-18 or TO-92 packages, which are small and widely used in various electronic circuits.

Applications: The 2N2222A transistor is used in a wide range of electronic circuits, including amplifiers, switching applications, signal processing, oscillators, and more.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

Link URL


Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com