Manufacturer | Part # | Datasheet | Description |
Freescale Semiconductor... |
MRF6S19100NBR1
|
620Kb/16P
|
RF Power Field Effect Transistors
|
MRF6S19100NR1
|
620Kb/16P
|
RF Power Field Effect Transistors
|
MRF7S19100NBR1
|
533Kb/15P
|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MRF7S19100NBR1
|
598Kb/18P
|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MRF7S19100NR1
|
533Kb/15P
|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MRF7S19100NR1
|
598Kb/18P
|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MRF7S19100NR1
|
598Kb/18P
|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Seiko Instruments Inc |
S-19100N12A-M5T2U
|
2Mb/39P
|
BUILT-IN DELAY CIRCUIT
|
S-19100N12A-M5T2U
|
2Mb/39P
|
FOR AUTOMOTIVE 125 OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
|
S-19100N12A-N4T2U
|
2Mb/39P
|
BUILT-IN DELAY CIRCUIT
|
S-19100N12A-N4T2U
|
2Mb/39P
|
FOR AUTOMOTIVE 125 OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
|
S-19100N12H-I4T1U
|
2Mb/45P
|
BUILT-IN DELAY CIRCUIT
|
S-19100N12H-I4T1U
|
2Mb/45P
|
FOR AUTOMOTIVE 105째C OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
|
S-19100N12H-M5T2U
|
2Mb/45P
|
BUILT-IN DELAY CIRCUIT
|
S-19100N12H-M5T2U
|
2Mb/45P
|
FOR AUTOMOTIVE 105째C OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
|
S-19100N12H-N4T2U
|
2Mb/45P
|
BUILT-IN DELAY CIRCUIT
|
S-19100N12H-N4T2U
|
2Mb/45P
|
FOR AUTOMOTIVE 105째C OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
|
S-19100N13A-M5T2U
|
2Mb/39P
|
FOR AUTOMOTIVE 125 OPERATION VOLTAGE DETECTOR BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
|
S-19100N13A-M5T2U
|
2Mb/39P
|
BUILT-IN DELAY CIRCUIT
|
S-19100N13A-N4T2U
|
2Mb/39P
|
BUILT-IN DELAY CIRCUIT
|