●

●

●

▲

◀

●

●

●

▲

◀

2. Drain

3. Source

1. Gate

Pb Free Plating Product

CS75N75

Pb

75V,80A Heatsink Planar N-Channel Power MOSFETs

General Description

This N-channel enhancement mode field-effect power transistor

using THINKI Semiconductor advanced planar stripe, DMOS technol-

ogy intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged

avalanche characteristics. The TO-220M-SQ pkg is well suited for

adaptor power units,amplifiers,inverters and SMPS application.

TO-220M-SQ

1

2

3

CS75N75

© 2006 Thinki Semiconductor Co., Ltd.

http://www.thinkisemi.com/

Page 1/5

Rev.08C

FEATURES

* Ultra low gate charge ( typical 117 nC )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

75

V

Gate-Source Voltage

±20

V

Continuous Drain Current

80

A

Pulsed Drain Current (Note 2)

320

A

Single Pulsed Avalanche Energy (Note 3)

700

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

12

V/ns

TO-220/TO-263

300

W

Power Dissipation

TO-220F

45

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area