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TK10A80W Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TK10A80W Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 iscN-Channel MOSFET Transistor TK10A80W,ITK10A80W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 800 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.45mA 3.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.8A 460 550 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ± 1 μ A IDSS Drain-Source Leakage Current VDS= 800V; VGS= 0V 10 μ A VSDF Diode forward voltage IDR =9.5A, VGS = 0 V 1.7 V |
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