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NTE2315 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE2315 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110 ° CRT video displays and is primarily intended for large screen displays. Absolute Maximum Ratings: Collector–Base Voltage (IE = 0), VCBO 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage (VBE = –6V), VCEV 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage (IB = 0), VCEO 200V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage (IC = 0), VEBO 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC Continuous 8A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak 15A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base Current, IB 2A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Damper Diode Peak Forward Current, IDM 10A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TC ≤ +25°C), Ptot 60W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperatuere Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Case, RthJC 2.08 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Ambient, RthJA 70 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICES VCE = 400V, VBE = 0 – – 100 µA ICEV VCE = 400V, VBE = –6V – – 100 µA Emitter Cutoff Current IEBO VEB = 6V, IC = 0 – – 3 mA Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 200 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 50mA, Note 1 – – –1.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 50mA, Note 1 – – 2.0 V DC Current Gain hFE IC = 3A, VCE = 5V – 3500 – Note 1. Pulse test: Pulse Duration = 300 µs, Duty Cycle = 1.5%. |
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