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K4S641632H-TC75 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K4S641632H-TC75 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 14 page ![]() SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM Rev. 1.8 August 2004 Revision History Revision 0.0 (May, 2003) - Target spec release Revision 0.1 (July, 2003) - Preliminary spec release Revision 0.2 (August, 2003) - Modified IBIS characteristic. Revision 1.0 (September, 2003) - Finalized. Revision 1.1 (September, 2003) - Corrected IBIS Specification. Revision 1.2 (October, 2003) - Deleted speed 7C at x4/x8. Revision 1.3 (October, 2003) - Deleted AC parameter notes 5. Revision 1.4 (November, 2003) - Modified Pin Function description. Revision 1.5 (February, 2004) - Corrected typo. Revision 1.6 (March, 2004) - Modified Pin Description. Revision 1.7 (May, 2004) - Added Note 5. sentense of tRDL parameter. Revision 1.8 (August, 2004) - Modified CLK cycle time(tcc) parameter in AC Characteristics. ( If you want use of CL=2 not CL=3, the maximum operating frequency is 100MHz regardless of its speed bin.) |
Similar Part No. - K4S641632H-TC75 |
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Similar Description - K4S641632H-TC75 |
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