K4S641632H-TC75 datasheet(9/14 Pages) SAMSUNG

Part #	K4S641632H-TC75

Description	64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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SDRAM 64Mb H-die (x4, x8, x16)

CMOS SDRAM

Rev. 1.8 August 2004

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S641632H-TC

4. K4S641632H-TL

5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)

Notes :

DC CHARACTERISTICS (x16)

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C for x16 only)

Parameter

Symbol

Test Condition

Version

Unit

Note

60

70

75

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

140

115

110

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

1

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

1

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

15

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

6

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

3

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

3

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

30

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

25

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

160

140

135

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

160

140

135

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

C1

mA

3

L400

uA

4

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