Alpha Industries, Inc. [781] 935-5150

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1

Specifications subject to change without notice. 6/99A

Low Noise/Medium Power

GaAs MESFET Chips

Features

s Low Noise Figure, 0.6 dB @ 4 GHz

s 20 dBm Output Power @ 18 GHz

s High Associated Gain, 13 dB @ 4 GHz

s High Power Added Efficiency, 25%

s Broadband Operation, DC–26 GHz

s Available in Tape and Reel Packaging

Description

The AFM04P3-212, 213 are high performance power

GaAs MESFET chips having a gate length of 0.25

µm and

a total gate periphery of 400

µm. These devices have

excellent gain and power performance through 26 GHz,

making them suitable for a wide range of commercial and

military applications in oscillator and amplifier circuits. They

also have excellent noise performance and can be used

in the first and second stage of low noise amplifier design.

The AFM04P3 employs Ti/Pd/Au gate metallization and

surface passivation to ensure a rugged, reliable part.

AFM04P3-212, AFM04P3-213

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

90.0

140.0

190.0

mA

Transconductance (gm)

60.0

80.0

mS

1.0

3.0

5.0

-V

Gate to Drain Breakdown

8.0

12.0

-V

Noise Figure (NF)

0.6

dB

13.8

dB

Output Power at 1 dB

20.0

dBm

9.0

dB

Power Added Efficiency (

ηadd)

25.0

%

Electrical Specifications at 25°C

Source

Gate

Source

Drain

Drain

Source

Gate

Source

212

213

Characteristic

Value

6 V

-4 V

1 mA

700 mW

-65 to +150°C

175°C

Absolute Maximum Ratings