60N120 datasheet(1/2 Pages) IXYS

Part #	60N120

Description	NPT3 IGBT

Download	2 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

1 / 2 page

1 - 2

Features

• NPT3 IGBT

- low saturation voltage

- positive temperature coefficient for

easy paralleling

- fast switching

- short tail current for optimized

performance in resonant circuits

• ISOPLUS 247TM package

- isolated back surface

- low coupling capacity between pins

and heatsink

- high reliability

- industry standard outline

Applications

• single switches

and with complementary free wheeling

diodes

• choppers

• phaselegs, H bridges, three phase

bridges e.g. for

- power supplies, UPS

- AC, DC and SR drives

- induction heating

IGBT

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

1200

V

GES

± 20

V

I

C25

T

C =

25°C

95

A

I

C90

T

C =

90°C

60

A

I

CM

V

GE = ±15 V; RG = 22 Ω; TVJ = 125°C

100

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

375

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 60 A; VGE = 15 V; TVJ =

25°C

2.1

2.7

V

T

VJ = 125°C

2.5

V

GE(th)

I

C = 2 mA; VGE = VCE

4.5

6.5

V

I

CES

V

CE = VCES; VGE = 0 V; TVJ =

25°C

0.1

mA

T

VJ = 125°C

0.1

mA

I

GES

V

CE = 0 V; VGE = ± 20 V

200

nA

t

d(on)

150

ns

t

r

60

ns

t

d(off)

700

ns

t

f

50

ns

E

on

7.2

mJ

E

off

6.0

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

3.8

nF

Q

Gon

V

CE = 600 V; VGE = 15 V; IC = 50 A

500

nC

R

thJC

0.33 K/W

R

thJH

0.66

K/W

Inductive load, T

VJ = 125°C

V

CE = 600 V; IC = 60 A

V

GE =

±15 V; R

G = 22 Ω

I

C25

= 95 A

V

CES

= 1200 V

V

CE(sat) typ. = 2.1 V

NPT3 IGBT

in ISOPLUS 247TM

Advanced Technical Information

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

IXER 60N120

E

C

G

C

E

G = Gate

C = Collector

E = Emitter

*Patent pending

Isolated Backside*

ISOPLUS 247TM

E153432

Similar Part No. - 60N120

Manufacturer	Part #	Datasheet	Description
Inchange Semiconductor ...	60N10	60Kb / 2P	Fast Switching Speed
Jiangsu Donghai Semicon...	60N10	714Kb / 10P	60A 100V N-channel Enhancement Mode Power MOSFET
	60N10	713Kb / 10P	60A 100V N-channel Enhancement Mode Power MOSFET
	60N10	714Kb / 10P	60A 100V N-channel Enhancement Mode Power MOSFET
	60N10	719Kb / 10P	60A 100V N-channel Enhancement Mode Power MOSFET

More results

Similar Description - 60N120

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	FII30-12E	72Kb / 4P	NPT3 IGBT
	IXEH40N120	81Kb / 4P	NPT3 IGBT
	IXEH25N120	182Kb / 4P	NPT3 IGBT
	IXER20N120	364Kb / 4P	NPT3 IGBT in ISOPLUS247
	IXER35N120D1	52Kb / 2P	NPT3 IGBT with Diode
	IXER60N120	268Kb / 4P	NPT3 IGBT in ISOPLUS 247
	IXEN60N120	97Kb / 4P	NPT3 IGBT in miniBLOC package
	IXER35N120D1	243Kb / 4P	NPT3 IGBT with Diode in ISOPLUS247
	FIO50-12BD	82Kb / 4P	Bidirectional Switch with NPT3 IGBT and fast Diode Bridge
eupec GmbH	FZ1200R12KL4C	263Kb / 8P	IGBT-Wechselrichter / IGBT-inverter

More results

60N120 Datasheet(PDF) 1 Page - IXYS Corporation

60N120 Datasheet(HTML) 1 Page - IXYS Corporation

Similar Part No. - 60N120

Similar Description - 60N120

Html Pages

1 2

Datasheet Download

Link URL