1N5221B - 1N5267B

500mW EPITAXIAL ZENER DIODE

Features

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 1)

500

mW

Thermal Resistance, Junction to Ambient Air (Note 1)

300

°C/W

Forward Voltage

1.1

V

Operating and Storage Temperature Range

-65 to +200

°C

·

Case: DO-35

·

Case Material: Glass

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Leads: Solderable per MIL-STD-202, Method 208

·

Terminals: Finish - Sn96.5Ag3.5. Solderable per

MIL-STD-202, Method 208

·

Polarity: Cathode Band

·

Marking: Type Number

·

Weight: 0.13 grams (approximate)

·

500mW Power Dissipation

·

High Stability

·

Surface Mount Equivalents Available

·

Hermetic Package

·

±5%

·

Lead Free Finish, RoHS Compliant (Note 2)

Mechanical Data

A

A

B

C

D

DO-35

Dim

Min

Max

A

25.40

¾

B

¾

4.00

C

¾

0.60

D

¾

2.00

All Dimensions in mm

Notes:

1. Valid provided that leads are kept at TL

£75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.

2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied where applicable,

see

EU Directive Annex Notes 5 and 7.

1 of 2

1N5221B - 1N5267B

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Z ibo Seno Electronic Engineering Co., Ltd.

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