TIP41 datasheet(1/3 Pages) JIANGSU

Part #	TIP41

Description	TO-220-3L Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO-220-3L

1. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L Plastic-Encapsulate Transistors

TIP41/41A/41B/41C TRANSISTOR (NPN)

FEA TURES

Medium Power Linear Switching Applications

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

TIP41

TIP41A

TIP41B

TIP41C

Unit

VCBO

Collector-Base Voltage

40

60

80

100

V

VCEO

Collector-Emitter Voltage

40

60

80

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

6

A

PC

Collector Power Dissipation

2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

TIP41

TIP4 1A

TIP41B

TIP41C

V(BR)CBO

IC= 1mA, IE=0

40

60

80

100

V

Collector-emitter breakdown voltage

TIP41

TIP41A

TIP41B

TIP41C

VCEO(sus)

IC= 30mA, IB=0

40

60

80

100

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 1mA, IC=0

5

V

Collector cut-off current

TIP41

TIP4 1A

TIP41B

TIP41C

ICBO

VCB=40V, IE=0

VCB=60V, IE=0

0.4

mA

VCB=80V, IE=0

VCB=100V, IE=0

Collector cut-off current

TIP41/41A

TIP41B/41C

ICEO

VCE= 30V, IB= 0

VCE= 60V, IB= 0

0.7

mA

Emitter cut-off current

IEBO

VEB=5V, IC=0

1

mA

hFE(1)

VCE= 4V, IC= 0.3A

30

DC current gain

hFE(2)

VCE=4 V, IC= 3A

15

75

Collector-emitter saturation voltage

VCE(sat)

IC=6A, IB=0.6A

1.5

V

Base-emitter voltage

VBE(on)

VCE= 4V, IC=6A

2

V

Transition frequency

fT

VCE=10V , IC=0.5A

f =1MHz

3

MHZ

www.cj-elec.com

1

D,Nov,2014

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