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SSG4407J Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4407J Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page  Elektronische Bauelemente SSG4407J -12A, -30V, RDS(ON) 13 mΩ Ω Ω Ω P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. C Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Off Characteristics Drain-Source Breakdown Voltage BVDSS -30 - - V VGS= 0V, ID= -250µA Drain-Source Leakage Current IDSS - - -1 µA VDS= -30V,VGS= 0V Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS=±20V On Characteristics 1 Gate-Threshold Voltage VGS(th) -1 - -2.2 V VDS=VGS, ID = -250µA - - 13 VGS= -10V, ID = -12A Drain-Source On-Resistance RDS(ON) - - 17 m VGS= -6V, ID = -10A Forward Transfer Conductance Gfs 25 - - S VDS= -5V, ID= -15A Dynamic Characteristics Input Capacitance Ciss - 2900 - Output Capacitance Coss - 410 - Reverse Transfer Capacitance Crss - 280 - pF VGS= 0V VDS= -15V f=1.0MHz Switching Characteristics Total Gate Charge Qg - 48 - Gate-Source Charge Qgs - 12 - Gate-Drain (“Miller”) Charge Qgd - 14 - nC ID= -10A VDS= -15V VGS= -10V Turn-On Delay Time Td(on) - 15 - Rise Time Tr - 11 - Turn-Off Delay Time Td(off) - 44 - Fall Time Tf - 21 - nS VDD= -15V VGS= -10V RG= 3 RL= 1.25 Gate Resistance RG - - 3.6 VDS=0V, VGS=0V, f=1.0MHz Source-Drain Diode Characteristics Forward On Voltage 1 VDS - - -1.2 V IS= -2A, VGS=0V Continuous Source Current IS - - -15 A Pulsed Source Current ISM - - -60 A Notes: 1. Pulse Test : Pulse Width≦300µs , duty cycle≦2%. |
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