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SSG4407J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4407J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SSG4407J -12A, -30V, RDS(ON) 13 mΩ Ω Ω Ω P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Q4407 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SSG4407J uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. FEATURES Simple Drive Requirement Lower On-resistance Low Gate Charge MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 4K 13 inch MAXIMUM RATINGS (T A = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -12 A Pulsed Drain Current IDM -48 A Single Pulse Avalanche Energy 1 EAS 115 mJ Total Power Dissipation PD 1.4 W Thermal Resistance Junction-Ambient RθJA 89 °C / W Lead Temperature for Soldering Purposes@1/8’’ from case for 10s TL 260 °C Operating Junction & Storage Temperature Range TJ, TSTG 150, -55 ~ 150 °C Notes: 1. Test condition: VDD= -50V, L=0.5mH, RG=25 , Starting TJ=25°C S S S G D D D D Dimensions in millimeters SOP-8 A H G B M D C J K F L E Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.700 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.17 0.25 N 0.25 REF. G 1.27 TYP. Date Code |
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