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RGT16NL65D Datasheet(PDF) 2 Page - Rohm |
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RGT16NL65D Datasheet(HTML) 2 Page - Rohm |
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2 / 13 page  www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. Datasheet RGT16NL65D Thermal Resistance IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Collector - Emitter Saturation Voltage Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 1.58 °C/W Parameter Symbol Values °C/W Parameter Symbol Conditions Values Unit Min. Typ. Max. Thermal Resistance Diode Junction - Case Rθ(j-c) - - 3.60 -- V Collector Cut - off Current ICES VCE = 650V, VGE = 0V -- 10 μA Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - 200 nA Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 5.5mA 5.0 6.0 7.0 V Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - VCE(sat) IC = 8A, VGE = 15V V Tj = 25°C - 1.65 2.1 Tj = 175°C - 2.15 - 2/11 2017.05 - Rev.A |
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