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RGS00TS65D Datasheet(PDF) 2 Page - Rohm |
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RGS00TS65D Datasheet(HTML) 2 Page - Rohm |
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2 / 13 page  www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Data Sheet RGS00TS65D lThermal Resistance lIGBT Electrical Characteristics (at T j = 25°C unless otherwise specified) VCE = 650V, VGE = 0V Parameter Symbol Values Unit Min. Typ. Max. °C/W °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17 Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.46 - - Unit Min. Typ. Max. μA mA Parameter Symbol Conditions Values V Collector Cut - off Current ICES Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Tj = 25°C Tj = 175°C 10 5 - - Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 2.5mA 5.0 6.0 Collector - Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V nA 7.0 V V Tj = 25°C - 1.65 2.10 Tj = 175°C - 2.15 - ±200 2/11 2016.07 - Rev.A |
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