2SA1012 datasheet(1/3 Pages) JIANGSU

Part #	2SA1012

Description	TO-220-3L Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220

-3L Plastic-Encapsulate Transistors

2SA1012 TRANSISTOR (PNP)

FEATURES

High Current Switching Applications

Low Collector Saturation Voltage

High Speed Swithing Time

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-5

A

PC

Collector Power Dissipation

2

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55

~+150

℃

ELECTRICAL CHARACTERISTICS(Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

T

yp

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC =-

0.1mA, IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

*

IC =-

10mA, IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V, IE=0

-1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-1

μA

DC current gain

hFE(1)

VCE=-1V, IC=-1A

70

240

hFE(2)

*

VCE=-1V, IC=-3A

30

Collector-emitter saturation voltage

VCE(sat)

*

IC=-3A, IB=

-150mA

-0.4

V

Base-emitter saturation voltage

VBE(sat)*

IC=-3A, IB=

-150mA

-1.2

V

Transition frequency

fT

VCE=-4V, IC=-1A

60

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

170

pF

Turn-on Time

ton

0.1

Storage Time

ts

1.0

Fall Time

tf

VCC=-30V,IC=-3A,

IB1=-IB2=-0.15A

0.1

μs

CLASSIFICATION

of hFE(1)

Rank

O

Y

Range

70-140

120-240

TO-220

-3L

1. BASE

2. COLLECTOR

3. EMITTER

RθJA

Thermal Resistance Junction

to Ambient

62.5

/W

℃

*Pulse test: tp≤300μs, δ≤0.02.

www.cj-elec.com

1

E,Nov,2014

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