2sd2137a datasheet(1/2 Pages) JIANGSU

Part #	2SD2137A

Description	TO-220-3L Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO-220-3L

1. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L Plastic-Encapsulate Transistors

2SD2137A

TRANSISTOR (NPN)

FEATURES

High DC Current Gain

Low Collector to Emitter Saturation Voltage VCE(sat)

Allowing Automatic Insertion with Radial Taping

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA,IE=0

80

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=30mA,IB=0

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,IC=0

6

V

Collector cut-off current

ICBO

VCB=80V,IE=0

100

μA

Collector cut-off current

ICEO

VCE=60V,IB=0

100

μA

Emitter cut-off current

IEBO

VEB=6V,IC=0

100

μA

hFE(1)

VCE=4V, IC=1A

70

320

DC current gain

hFE(2)

VCE=4V, IC=3A

10

Collector-emitter saturation voltage

VCE(sat)

IC=3A,IB=0.375A

1.2

V

Base-emitter voltage

VBE

VCE=4V, IC=3A

1.8

V

Transition frequency

fT

VCE=5V,IC=0.2A, f=10MHz

30

MHz

CLASSIFICATION OF hFE(1)

RANK

Q

P

O

RANGE

70-150

120-250

160-320

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current

3

A

PC

Collector Power Dissipation

2

W

RθJA

Thermal Resistance From Junction To Ambient

63

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

B,Nov,2014

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