M30620FCAFP datasheet(187/274 Pages) MITSUBISHI

187 / 274 page

Mitsubishi microcomputers

M16C / 62A Group

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Timing (Vcc = 5V)

187

Memory Expansion Mode and Microprocessor Mode

(When accessing external memory area with wait, and select multiplexed bus)

BCLK

CSi

ALE

4ns.min

tcyc

ADi

BHE

ADi

/DBi

td(AD–ALE)

Read timing

0ns.min

BCLK

CSi

ALE

–4ns.min

4ns.min

tcyc

ADi

BHE

ADi

/DBi

Write timing

Address

Measuring conditions :

• VCC=5V

• Input timing voltage : Determined with VIL=0.8V, VIH=2.5V

• Output timing voltage : Determined with VOL=0.8V, VOH=2.0V

(tcyc/2)ns.min

Address

Data input

(tcyc/2)ns.min

td(BCLK–ALE)

(tcyc/2)ns.min

th(WR–CS)

Address

(tcyc*3/2–40)ns.min

td(BCLK–ALE)

(tcyc/2)ns.min

(tcyc/2-25)ns.min

Address

25ns.max

tSU(DB–RD)

tac3(RD–DB)

(tcyc/2)ns.min

th(ALE–AD)

30ns.min

td(AD–RD)

0ns.min

tdz(RD–AD)

8ns.max

td(AD–WR)

0ns.min

Data output

WR,WRL,

WRH

td(BCLK–CS)

25ns.max

th(RD–CS)

th(BCLK–CS)

4ns.min

th(BCLK–AD)

th(RD–DB)

0ns.min

40ns.min

25ns.max

td(BCLK–AD)

–4ns.min

th(BCLK–ALE)

td(BCLK–RD)

25ns.max

th(RD–AD)

th(BCLK–RD)

0ns.min

td(BCLK–CS)

25ns.max

th(BCLK–CS)

th(BCLK–DB)

4ns.min

th(WR–DB)

td(DB–WR)

th(BCLK–AD)

td(AD–ALE)

(tcyc/2–25)ns.min

td(BCLK–AD)

25ns.max

th(BCLK–ALE)

25ns.max

td(BCLK–WR)

th(BCLK–WR)

th(WR–AD)

td(BCLK–DB)

40ns.max

VCC = 5V

Figure 1.23.6. VCC = 5V timing diagram (5)

M30620FCAFP Datasheet(PDF) 187 Page - Mitsubishi Electric Semiconductor

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